DTS2305

P-Channel 0-V (D-S) MOSFET DTS2305 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V RDS(on) () at VGS = - 1.8 V ID (A) Configuration - 20 0.058 0.082 0.117 -5 Single FEATURES Halogen-free Option Available TrenchFET® Power MOSFET APPLICATIONS Load Switch for Portable Devices (SOT-23) G 1 S2 3D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 20 ±8 -5 -3 - 2.5 - 20 - 11 6 2 0.67 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction...