DTS2301

P-Channel 20 V (D-S) MOSFET DTS2301 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V ID (A) Configuration - 20 0.068 0.095 - 3.8 Single FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction)a TC = 25 °C TC = 125 °C ID IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 20 ±8 - 3.8 - 2.7 - 3.8 - 15 -6 4 3 1 - 55 to + 175 THERMAL RESISTANCE RATIN...