Document
P-Channel 20 V (D-S) MOSFET
DTS2051
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) () 0.34 at VGS = - 4.5 V 0.49 at VGS = - 2.5 V
ID (A)c - 0.75 - 0.53
Qg (Typ.) 1.3 nC
SOT-723 G1
3D S2
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • DC/DC Converters
S
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 70 °C TA = 25 °C TA = 70 °C
ID IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C TC = 25 °C
IS
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Notes: a. Surface mounted on 1" x 1" FR4 board..