DTS2011

P-Channel 20 V (D-S) MOSFET DTS2011 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.085 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A)c - 3.1 - 2.3 Qg (Typ.) 4.3 nC SOT-323 S FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Converters G1 3D S2 Top View G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C IS Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1" x 1" FR4 b...