DTS1003

P-Channel 100-V (D-S) MOSFET DTS1003 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) 0.18 at VGS = - 10 V 0.2 at VGS = - 4.5 V ID (A) -3 -2.8 Qg (Typ.) 7.9 TO-236 (SOT-23) G1 S2 3D Top View DTS1003 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET Ultra Low On-Resistance Small Size APPLICATIONS Active Clamp Circuits in DC/DC Power Supplies ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 100 Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current TA = 25 °C TA = 70 °C VGS ID IDM - 3.8 - 2.5 ± 20 - 10.6 -3 - 2.8 Continuous Source Current (Diode Conduction)a, b IS - 5 - 6.8 Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 1.0 mH IAS EAS 4.5 1.01 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 1.25 0.75 0.8 0.48 Operating Junction and Storage Temperature Range T...