Power MOSFET
Power MOSFET
DTS6401
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuratio...
Description
Power MOSFET
DTS6401
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 60 VGS = - 10 V
12 3.8 5.1 Single
0.053
FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm P-Channel 175 °C Operating Temperature Dynamic dV/dt Rating Low Thermal Resistance Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-236 (SOT-23)
S
G1 S2
3D
G
Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at - 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range ...
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