BPX48 Datasheet (data sheet) PDF





BPX48 Datasheet, Silicon Differential Photodiode

BPX48   BPX48  

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2015-12-23 Silicon Differential Photodio de Version 1.3 BPX 48 Features: • Es pecially suitable for applications from 400 nm to 1100 nm • High photosensit ivity • DIL plastic package with high packing density • Double diode with extremely high homogeneousness Applica tions • Industrial electronics • Fo r control and drive circuits • Edge c ontrol • Follow-up control • Path a nd angle scanning Ordering Information Type: BPX 48 Photocurrent Ordering C ode IP [µA] Ev = 1000 lx, Std. Light A, VR = 5 V, T = 2856 K 24 (≥ 15) Q 62702P0017S001 2015-12-23 1 Version 1.3 BPX 48 Maximum Ratings (TA = 25 C) Parameter Operating and storage temperature

BPX48 Datasheet, Silicon Differential Photodiode

BPX48   BPX48  
range Reverse voltage Total Power dissi pation Electrostatic discharge (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Symbo l Top; Tstg VR Ptot VESD Values -40 .. . 80 10 50 2000 Unit °C V mW V Chara cteristics (TA = 25 °C, per single dio de / für jede Einzeldiode) Parameter Symbol Photocurrent (Ev = 1000 lx, St d. Light A, VR








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