BC818-40

NPN Silicon AF Transistors BC 817 BC 818 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 (PNP) Type BC 817-16 BC 817-25 BC 817-40 BC 818-16 BC 818-25 BC 818-40 Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs Ordering Code Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BC 817 BC 818 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BC 817 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 50 5 Values BC 818 25 30 5 500 1 100 200 330 150 – 65 … + 150 Unit V mA A mA mW ˚C Total power dissipation, TC = 79 ˚C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 817 BC 818 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 817 BC 818 Collector-base breakdown voltage IC = 100 µA BC 817 BC 818 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter ...