BC846W...BC850W
NPN Silicon AF Transistors
For AF input stages and driver applications High current gain Low coll...
BC846W...BC850W
NPN Silicon AF
Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types:
3
BC856W, BC857W, BC858W BC859W, BC860W (
PNP)
2 1
VSO05561
Type BC846AW BC846BW BC847AW BC847BW BC847CW BC848AW BC848BW BC848CW BC849BW BC849CW BC850BW BC850CW
Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323
1
Dec-11-2001
BC846W...BC850W
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC846W BC847W BC848W Unit BC850W BC849W 65 80 80 6 45 50 50 6 100 200 200 200 250 150 -65 ... 150 mW °C 30 30 30 5 mA mA V
Thermal Resistance Junction - soldering point 1) RthJS
Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0
BC846W BC847/850W BC848/849W
105
Values typ. max.
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Unit
V(BR)CEO
V 65 45 30 -
Collec...