MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC846ALT1/D
General Purpose Transistors
NPN Silicon
COL...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC846ALT1/D
General Purpose
Transistors
NPN Silicon
COLLECTOR 3
1 BASE
MAXIMUM RATINGS
2 EMITTER
Rating
BC847 BC848 Symbol BC846 BC850 BC849
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current — Continuous
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING
RqJA TJ, Tstg
417 – 55 to +150
°C/W °C
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 =...
