Document
BC846T...BC850T
NPN Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types:
3
BC856T, BC857T, BC858T, BC859T, BC860T
2 1
VPS05996
Type BC846AT BC846BT BC847AT BC847BT BC847CT BC848AT BC848BT BC848CT BC849BT BC849CT BC850BT BC850CT
Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2cs 2Fs 2Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75
1
Aug-01-2002
BC846T...BC850T
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 109 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1)
Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 BC846T BC847T/BC850T BC848T/BC849T V(BR)CBO 80 50 30 BC846T BC847T/850T BC848T/849T V(BR)CEO 65 45 30 V
RthJS
165
Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg
BC846T 65 80 80 6
BC847T BC848T BC850T BC849T 45 50 50 6 100 200 200 200 250 150 -65 ... 150 30 30 30 5
Unit V
mA mA
mW °C
K/W
Unit max.
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol min. Values typ.
Collector-base breakdown voltage
1For calculation of R thJA please refer to Application Note Thermal Resistance
2
Aug-01-2002
BC846T...BC850T
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 IC = 10 µA, VBE = 0 IC = 10 µA, VBE = 0 IE = 1 µA, IC = 0 IE = 1 µA, IC = 0 IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V IC = 10 µA, VCE = 5 V IC = 10 µA, VCE = 5 V DC current gain 1) IC = 2 mA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1) Pulse test: t ≤=300µs, D = 2%
Symbol min. V(BR)CES 65 50 30 V(BR)EBO 6 6 5 ICBO ICBO hFE hFE-group A hFE-group B hFE-group C hFE hFE-group A hFE-group B hFE-group C VCEsat VBEsat VBE(ON) 580 110 200 420 -
Values typ. max.
Unit
V 15 5 nA µA 140 250 480 180 290 520 90 200 700 900 660 220 450 800 mV 250 600 700 770
BC846T BC847T/850T BC848T/849T BC846T BC847T/BC850T BC848T/BC849T
Emitter-base breakdown voltage
Collector-emitter saturation voltage1)
3
Aug-01-2002
BC846T...BC850T
Electrical Characteristicsat TA = 25°C, unless otherwise specified. Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-group A hFE-group B hFE-group C hFE-group A hFE-group B hFE-group C h12e h21e h22e 18 30 60 200 330 600 1.5 2 3 hFE-group A hFE-group B hFE-group C hFE-group A hFE-group B hFE-group C h11e 2.7 4.7 8.7 10-4 Ceb 8 k Ccb 3 pF fT 250 MHz Symbol min. Values typ. max. Unit
Open-circuit reverse voltage transf.ratio
Short-circuit forward current transf.ratio
S
4
Aug-01-2002
BC846T...BC850T
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC Characteristics Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage f = 10 ... 50 Hz f = 1 kHz, f = 200 Hz BC849T BC850T Vn BC850T 0.135 µV F 1.2 1 4 4 dB Symbol min. Values typ. max. Unit
IC = 200 µA, VCE = 5 V, RS = 2 k,
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Aug-01-2002
BC846T...BC850T
Total power dissipation Ptot = f (TS )
Collector-base capacitance CCB = f (VCBO Emitter-base capacitance CEB = f (VEBO)
BC 846...850 EHP00361
300
mW
C CB0 ( C EB0 )
12 pF 10
P tot
200
8
C EB
150
6
100
4
C CB
50
2
0 0
20
40
60
80
100
120 °C
150
0 10 -1
5
10 0
V VCB0
TS
10 1 (VEB0 )
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
Transition frequency fT = f (IC) VCE = 5V
10 3 MHz
EHP00363
Ptotmax / PtotDC
fT
5
10 2
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 .