BC847
SMALL SIGNAL NPN TRANSISTORS
Type BC847B
s
Marking 1F
s
s s
SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE...
BC847
SMALL SIGNAL
NPN TRANSISTORS
Type BC847B
s
Marking 1F
s
s s
SILICON EPITAXIAL PLANAR
NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE
PNP COMPLEMENT IS BC857
2 3 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CBO V CEO V EBO IC I CM I BM I EM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature
o
Value 50 50 45 6 0.1 0.2 0.2 0.2 300 -65 to 150 150
Uni t V V V V A A A A mW
o o
C C
October 1997
1/4
BC847
THERMAL DATA
R t hj-amb R th j-SR Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 420 330
o o
C/W C/W
Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = 30 V V CE = 30 V I C = 10 µ A T amb = 150 o C 50 Min. Typ . Max. 15 5 Un it nA µA V
V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Bas...
