2N6499

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N6497/6498/6499 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain: hFE= 10-75@IC= 2.5A APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2N6497 350 VCBO Collector-Base Voltage 2N6498 400 V 2N6499 450 2N6497 250 VCEO Collector-Emitter Voltage 2N6498 300 V 2N6499 350 VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A ICM Collector Current-Peak IB Base Current 10 A 2A PD Total Power Dissipation@TC=25℃ 80 W Tj Junction Temperature Tstg Storage Temperature 150 -65~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Rresistance,Junction to Case MAX UNIT 1.56 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc...