Bipolar Transistor
Description:
A Silicon NPN transistor in a T0-220 type package designed for high-voltage, high-speed...
Bipolar
Transistor
Description:
A Silicon
NPN transistor in a T0-220 type package designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch-mode applications such as switching
regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits
Maximum Ratings:
Characteristic
Collector-Emitter Voltage Collector-Base Voltage Collector Current - Continuous
- Peak
Base Current - Continuous - Peak
Total Power Dissipation (TC = +25°C), Derate Above 25°C
Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-case Lead Temperature (During Soldering, ⅛" from case, 5 sec)
Symbol VCEO(sus)
VCBO lC
lB
PD TJ Tstg Rthjc TL
Rating 350 6 5 10 2 12 80 640
-65 to +150
1.56 +275
Unit V
A
W mW/°C
°C °C/W
°C
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Bipolar
Transistor
Electrical Characteristics (TA = 25...
