LEVEL MOSFET. 2N6901 Datasheet

2N6901 MOSFET. Datasheet pdf. Equivalent

Part 2N6901
Description N-CHANNEL LOGIC LEVEL MOSFET
Feature TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978).
Manufacture Microsemi
Datasheet
Download 2N6901 Datasheet

2N6901 Datasheet
Technical Data TRANSISTOR maximum ratings VDS VDG VGS ID I 2N6901 Datasheet
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-80 2N6901 Datasheet
Technical Data TRANSISTOR maximum ratings VDS VDG VGS ID I 2N6901-M Datasheet
Recommendation Recommendation Datasheet 2N6901 Datasheet




2N6901
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
N-CHANNEL LOGIC LEVEL MOSFET
Qualified per MIL-PRF-19500/570
2N6901
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Drain – Source Voltage
VDS
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Max. Power Dissipation
TC = +25°C
TC = +100°C
VGS
ID1
ID2
Ptl
Drain to Source On State Resistance
Rds(on)
Operating & Storage Temperature
Top, Tstg
Note: (1) Derated Linearly by 0.067 W/°C for TC > +25°C
(2) VGS = 5Vdc, ID = 1.07A
Value
100
± 10
1.69
1.07
8.33 (1)
1.4 (2)
-55 to +150
Unit
Vdc
Vdc
Adc
Adc
W
Ω
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min.
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc
Gate-Source Voltage (Threshold)
VDS VGS, ID = 1.0mA
VDS VGS, ID = 1.0mA, Tj = +125°C
VDS VGS, ID = 1.0mA, Tj = -55°C
Gate Current
VGS = ±10V, VDS = 0V
VGS = ±10V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 80V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 5V, ID = 1.07A pulsed
V(BR)DSS
100
VGS(th)1
VGS(th)2
VGS(th)3
IGSS1
IGSS2
IDSS1
IDSS2
rDS(on)1
1.0
0.5
Tj = -125°C
VGS = 5V, ID = 1.07A pulsed
Diode Forward Voltage
VGS = 0V, ID = 1.69A pulsed
rDS(on)2
VSD
0.8
Max.
2.0
3.0
±100
±200
1.0
50.0
1.4
2.6
1.6
Unit
Vdc
Vdc
nAdc
µAdc
uAdc
Ω
Ω
Vdc
T4-LDS-0188 Rev. 1 (101985)
2N6901
TO-205AF
(formerly TO-39)
SEE FIGURE 1
Page 1 of 3



2N6901
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
VGS = 5V, ID = 1.69A
VDS = 50V
ID = 1.69A, VGS = 5Vdc,
Gate drive impedance =
25Ω,
VDD = 50Vdc
di/dt 100A/µs, VDD
30V,
IF = 1.0A
Symbol
Qg(on)
Qgs
Qgd
Symbol
td(on)
tr
td(off)
tf
trr
Min.
Min.
Max.
5.0
1.0
2.9
Max.
25
80
45
80
250
Unit
nC
Unit
ns
ns
T4-LDS-0188 Rev. 1 (101985)
Page 2 of 3





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