Document
TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
Devices
2N6989 2N6989U
2N6990
Qualified Level JAN
JANTX JANTXV
JANS
MAXIMUM RATINGS (1)
Ratings
Collector-Emitter Voltage (3)
Collector-Base Voltage (3)
Emitter-Base Voltage (3)
Collector Current (3)
Total Power Dissipation
@ TA = +250C 2N6989(2) 2N6989U(2) 2N6990(2)
Symbol VCEO VCBO VEBO IC
PD
Value 50 75 6.0 800
1.5 1.0 0.4
Operating & Storage Junction Temperature Range
Top, Tstg -65 to +200
1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/0C above TA = +250C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.
Units Vdc Vdc Vdc mAdc
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc
Collec.