POWER MOSFET. 2N65 Datasheet

2N65 MOSFET. Datasheet pdf. Equivalent


Part 2N65
Description N-CHANNEL POWER MOSFET
Feature .
Manufacture GME
Datasheet
Download 2N65 Datasheet


UNISONIC TECHNOLOGIES CO., LTD 2N65 2A, 650V N-CHANNEL POWER 2N65 Datasheet
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UNISONIC TECHNOLOGIES CO., LTD 2N65-C 2A, 650V N-CHANNEL POW 2N65-C Datasheet
UNISONIC TECHNOLOGIES CO., LTD 2N65-CB 2A, 650V N-CHANNEL PO 2N65-CB Datasheet
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2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2N652 GERM 2N650 Datasheet
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2N65
Production specification
2A, 650 Volts N-CHANNEL POWER MOSFET
FEATURES
z RDS(on)=5.0@VGS=10V.
Pb
z Ultra Low gate charge (typical 9.0nC) Lead-free
z Low reverse transfer capacitance (Crss = typical 5.0 pF)
z Fast switching capability
z Avalanche energy specified
z Improved dv/dt capability, high ruggedness
2N65
TO-251 TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS
ID
IDM
VGSS
Drain-Source voltage
Drain current continuous
Drain current Pulsed (Note2)
Gate -Source voltage
650
2.0
8.0
±30
V
A
A
V
IAR
EAR
EAS
dv/dt
PD
Avalanche Current (Note2)
2.0
Avalanche Energy
Repetitive(Note 2) 4.5
Avalanche Energy
Single Pulse(Note 3) 140
Peak Diode Recovery dv/dt (Note4)
Power Dissipation
4.5
35
A
mJ
mJ
V/ns
W
TJ Junction Temperature
+150
TOPR TSTG
θJA
θJc
Operating and Storage Temperature
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
-55 ~ +150
50
2.87
/W
/W
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently
damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not
implied.
V(W)110
Rev.A
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1



2N65
Production specification
2A, 650 Volts N-CHANNEL POWER MOSFET
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD2.4A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
2N65
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-body Leakage
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static drain-Source on-resistance
DYNAMIC CHARACTERISTICS
BVDSS
ΔBVDSS/
ΔTJ
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V,ID=250μA
ID=250UA
VDS=650V, VGS=0V
VDS=0V, VGS=30V
VDS=0V, VGS=-30V
VDS=VGS, ID=250μA
VGS=10V,ID=1A,
650 -
- 0.4
--
--
--
2.0 -
- 4.2
Forward transconductance
gFS
VDS=50V,ID=1A (Note1)
- 2.25
Input Capacitance
Ciss
- 270
Output Capacitance
Coss
VDS=25V,VGS=0V,f=1.0MHz
-
40
Reverse Transfer Capacitance
Crss
-5
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tR
td(off)
tf
Qg
Qgs
Qgd
VDD=325V,ID=2.4A,RG=25
(Note1,2)
VDS=520V,ID=2.4A,VGS=10V
(Note1,2)
-
-
-
-
-
-
-
10
25
20
25
9.0
1.6
4.3
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain-Source
Diode Forward Current
ISD
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
Drain-Sourse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Notes:
VSD
trr
Qrr
VGS=0V,ISD=2.0A
VGS=0V,ISD=2.4A,
dIF/dt=100A/us (Note1)
1. Pulse Test: Pulse Width 300μs, Duty Cycle2%
--
--
--
- 180
- 0.72
MAX
-
-
1
100
-100
4.0
5.0
-
350
50
7
30
60
50
60
11
-
-
2.0
8.0
1.5
-
-
UNIT
V
V/
μA
nA
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
V(W)110
Rev.A
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