Power MOSFET. 2N65 Datasheet

2N65 MOSFET. Datasheet pdf. Equivalent


Part 2N65
Description 650V N-Channel Power MOSFET
Feature R SEMICONDUCTOR 2N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast sw.
Manufacture JINAN JINGHENG
Datasheet
Download 2N65 Datasheet


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2N65
R
SEMICONDUCTOR
2N65
650V N-Channel Power MOSFET
FEATURES
RDS(ON)<4.4Ω @ VGS=10V,ID=1A
Fast switching capability
Lead free in compliance with EU RoHS directive.
Improved dv/dt capability,high ruggedness
MECHANICAL DATA
PRODUCT SUMMARY
V DS (V)
RDS(on) (Ω)
650 4.4 @ VGS =10V
TO-220AB
2N65
ITO-220AB
2N65F
ID (A)
2
TO-263
2N65D
Case:TO-220,ITO-220,TO-251,TO-252,
TO-262,TO-263 Package
23
1
Ordering Information
Part No.
Package
Packing
1 23
TO-262
2N65E
1 23
TO-251
2N65N
TO-252
2N65M
2N65-TU
TO-220
50pcs / Tube
2N65F-TU
ITO-220
50pcs / Tube
2N65E-TU
TO-262
50pcs / Tube
2N65D-TU
2N65D-TR
2N65N-TU
2N65M-TU
2N65M-TR
TO-263
TO-263
TO-251
TO-252
TO-252
50pcs / Tube
800pcs / 13"Reel
75pcs / Tube
75pcs / Tube
2.5Kpcs / 13"Reel
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
D
G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
(TC=25 C , unless otherwise specified)
SYMBOL
VDSS
VGSS
ID
IDM
EAS
RATINGS
650
30
2.0
8.0
115
UNIT
V
V
A
A
mJ
S
TO-220/TO-263/TO-262
44
Power Dissipation
ITO-220
PD
23 W
TO-251/TO-252
34
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
C
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=30mH, IAS=2.7A,VDD=50V,RG=25Ω,Starting TJ=25 C
JINAN JINGHENG ELECTRONICS CO., LTD. 7-1 HTTP://WWW.JINGHENG.CN



2N65
2N65
650V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
TO-220/ITO-220
Junction to Ambient
TO-262/TO-263
TO-251/TO-252
TO-220/TO-263/TO-262
Junction to Case
ITO-220
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
2.35
5.5
2.9
UNIT
C /W
C /W
ELECTRICAL CHARACTERISTICS
(TC=25 C , unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
SYMBOL TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V,ID=250μA
VDS=650V,VGS=0V
VG=30V,VDS=0V
VGS=-30V,VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V,ID=1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD=300V,ID=2A,
RG=25Ω(Note1,2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG VDS=480V,ID=2.4A,
QGS VGS=10V(Note1,2)
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V,IS=2.0A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤300μS,Duty cycle≤2%.
VGS=0V,IS=2A
dIF/dt=100A/μs(Note 1)
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
650 V
10 μA
100 nA
-100 nA
2.0 4.0 V
4 4.4 ΩΩ
300 pF
45 pF
2 pF
10 ns
25 ns
20 ns
25 ns
5.7 nC
1.8 nC
2 nC
1.4 V
2.0 A
8.0 A
357 ns
2 μC
JINAN JINGHENG ELECTRONICS CO., LTD.
7-2 HTTP://WWW.JINGHENG.CN







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