RM2N650IP

RM2N650IP RM2N650LD N-Channel Super Junction Power MOSFET Ċ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant Application ƽ Power factor correction˄PFC˅ ƽ Switched mode power supplies(SMPS) ƽ Uninterruptible Power Supply˄UPS˅ VDS@Tjmax RDS(ON) TYP ID 710 2.2 2 V Ω A Schematic diagram Package Marking And Ordering Information Device Device Package Marking RM2N650IP TO-251 2N650 RM2N650LD TO-252 2N650 Table 1. Absolute Maximum Ratings (TC=25ć) Parameter Symbol Drain-Source Voltage (VGS 0V˅ VDS Gate-Source Voltage (VDS ...