HG Semiconductors
2N6199HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION:
The HG 2N6199...
HG Semiconductors
2N6199HG RF POWER
TRANSISTOR
ROHS Compliance,Silicon
NPN POWER
TRANSISTOR
DESCRIPTION:
The HG 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz.
FEATURES:
PG = 10 dB Typical at 25 W/175 MHz Load VSWR at Rated Conditions
Omnigold™ Metallization System
MAXIMUM RATINGS
IC 4.0 A
VCB 65 V
PDISS
40 W @ TC = 25 °C
TJ -55 °C to +200 °C
TSTG
-55 °C to +150 °C
JC 4.4 °C/W
PACKAGE STYLE .380" 4L STUD
.112x45°
A
BC
EE
ØC
B
D #8-32 UNC-2A
HI J
G
F E
DIM
A B C D E F G H I J
M IN IM U M inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
M A X IM U M inches / mm
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10864
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCBO
IC = 200 mA
BVCEO
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
IC = 200 mA
Cob ...