BC848

Semiconductor BC848 NPN Silicon Transistor Descriptions General purpose application Switching application Features High voltage : VCEO=30V Complementary pair with BC858 Ordering Information Type NO. BC848 Marking SA : hFE rank Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.9±0.1 1.12 Max. 0~0.1 KST-2008-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 -0.03 +0.05 1 BC848 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure (Ta=25°C) Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE fT Cob NF * Test Condition IC=1mA, IB=0 VCE=5V, IC=2mA IC=100mA, IB=5mA IC=100mA, IB=5mA VCB=35V, IE=0 VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=200µA, f=1KHz, Rg=2KΩ Min. Typ. Max. 30 550 110 900 150 700 600 15 800 4.5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2008-000 2 BC848 Electrical Chara...