Document
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
Preferred Devices
Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.
Features
• Pb−Free Packages are Available
http://onsemi.com (3) (2) (1)
Q1 Q2
(4) (5)
(6)
MAXIMUM RATINGS
Rating Collector −Emitter Voltage
Symbol
BC856 BC857 BC858
VCEO
Value
−65 −45 −30
Unit V
Collector −Base Voltage
BC856 BC857 BC858
VCBO
−80 −50 −30
V
Emitter −Base Voltage Collector Current −Continuous THERMAL CHARACTERISTICS
VEBO IC
−5.0 −100
V mAdc
Characteristic
Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C
Symbol PD
Max 380 250
3.0
Unit mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA 328 °C/W
Junction and Storage Temperature Range
TJ, Tstg − 55 to +150 °C
Maximum ratings are those v.