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BC858CDW1T1 Dataheets PDF



Part Number BC858CDW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistors
Datasheet BC858CDW1T1 DatasheetBC858CDW1T1 Datasheet (PDF)

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • Pb−Free Packages are Available http://onsemi.com (3) (2) (1) Q1 Q2 (4) (5) (6) MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol BC856 BC857 BC858 VCEO Value −65 −45 −30 Unit V Collecto.

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BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • Pb−Free Packages are Available http://onsemi.com (3) (2) (1) Q1 Q2 (4) (5) (6) MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol BC856 BC857 BC858 VCEO Value −65 −45 −30 Unit V Collector −Base Voltage BC856 BC857 BC858 VCBO −80 −50 −30 V Emitter −Base Voltage Collector Current −Continuous THERMAL CHARACTERISTICS VEBO IC −5.0 −100 V mAdc Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Symbol PD Max 380 250 3.0 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 328 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Maximum ratings are those v.


D2601N BC858CDW1T1 BC858BDW1T1


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