PNP Silicon Darlington Transistors
For general AF applications High collector current High current gain Compleme...
PNP Silicon Darlington
Transistors
For general AF applications High collector current High current gain Complementary types: BCP29/49 (
NPN)
B(1)
BCP28, BCP48
4
C(2,4)
3 2 1 VPS05163
Type BCP28 BCP48
Marking BCP 28 BCP 48
1=B 1=B
E(3)
EHA00008
Pin Configuration 2=C 3=E 4=C 2=C 3=E 4=C
Package SOT223 SOT223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature
Symbol
VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
BCP28
BCP48
30 60
40 80
10 10
500
800
100
200
1.5
150
-65 ... 150
Thermal Resistance Junction - soldering point1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit V
mA mA
W °C
K/W
1 Jul-12-2001
BCP28, BCP48
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
...
