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NPN Silicon Darlington Transistors
For general AF applications High collector current High current gain Complementary types: BCP28/48 (PNP)
B(1)
BCP29, BCP49
4
C(2,4)
3 2 1 VPS05163
Type BCP29 BCP49
Marking BCP 29 BCP 49
1=B 1=B
E(3)
EHA00009
Pin Configuration 2=C 3=E 4=C 2=C 3=E 4=C
Package SOT223 SOT223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature
Symbol
VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
BCP29
BCP49
30 60
40 80
10 10
500
800
100
200
1.5
150
-65 ... 150
Thermal Resistance Junction - soldering point1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit V
mA mA
W °C
K/W
1 Nov-29-2001
BCP29, BCP49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
.