DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
BC859W; BC860W PNP general purpose transistors
Product data ...
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
BC859W; BC860W
PNP general purpose
transistors
Product data sheet Supersedes data of 1997 Sep 03
1999 Apr 12
NXP Semiconductors
PNP general purpose
transistors
Product data sheet
BC859W; BC860W
FEATURES Low current (max. 100 mA) Low voltage (max. 45 V).
APPLICATIONS Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
TYPE NUMBER
BC859W BC859BW BC859CW
MARKING CODE
4D∗ 4B∗ 4C∗
TYPE NUMBER
BC860W BC860BW BC860CW
Note
1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia.
MARKING CODE
4H∗ 4F∗ 4G∗
handbook, halfpage
1 Top view
3
1
2
MAM048
3 2
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO
VCEO
VEBO IC IC...