Document
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
2N1711
2N1890
Qualified Level
JAN JANTX
MAXIMUM RATINGS
Ratings Collector-Base Voltage
Emitter-Base Voltage
Collector Current Total Power Dissipation
@ TA = +250C (1) @ TC = +250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Impedance
1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C
Symbol VCBO VEBO IC PT
TJ, Tstg
Symbol ZθJX
2N1711 2N1890 75 100 7.0 500 0.8 3.0 -65 to +200
Max. 58
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
2N1711, S 2N1890, S
V(BR)CBO
Collector-Emitter Breakdown Voltage
RBE = 10 Ω, IC = 100 mAdc
2N1711, S 2N1890, S
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
2N1711, S 2N1890, S
V(BR)CEO
Emitter-Base Breakdown Voltage
IE = 100 µAdc C.