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2N1890 Dataheets PDF



Part Number 2N1890
Manufacturers Microsemi
Logo Microsemi
Description NPN LOW POWER SILICON TRANSISTOR
Datasheet 2N1890 Datasheet2N1890 Datasheet (PDF)

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C Symbol VCBO VEBO IC P.

  2N1890   2N1890



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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 2N1890 75 100 7.0 500 0.8 3.0 -65 to +200 Max. 58 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc 2N1711, S 2N1890, S V(BR)CBO Collector-Emitter Breakdown Voltage RBE = 10 Ω, IC = 100 mAdc 2N1711, S 2N1890, S V(BR)CER Collector-Emitter Breakdown Voltage IC = 30 mAdc 2N1711, S 2N1890, S V(BR)CEO Emitter-Base Breakdown Voltage IE = 100 µAdc C.


2N1711 2N1890 SFT5013


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