Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC846ALT1/D
General Purpose Transistors
BC846ALT1,BLT1 BC847ALT1,
COLLECTOR 3
NPN Silicon
1 BASE
BLT1,CLT1 thru BC850ALT1,BLT1, CLT1
BC846, BC847 and BC848 are Motorola Preferred Devices
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100
2 EMITTER
Unit V V V mAdc
1 2
3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C Collector – Base Breakdown Voltage (IC = 10 mA) Emitter – Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C BC846A,B BC847A,B,C BC848A,B,C, BC849A,B,C, BC850A,B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
ICBO
nA µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A, BC849A, BC850A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 V V mV —
(IC = 2.0 mA, VCE = 5.0 V)
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC849A,B,C, BC850A,B,C 1.0 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10 fT Cobo NF — — — — 10 4.0 100 — — — — 4.5 MHz pF dB
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3
Figure 1. Normalized DC Current Gain
2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0
Figure 2. “Saturation” and “On” Voltages
–55°C to +125°C 1.2 1.6 2.0 2.4 2.8
0.4
0
0.02
0.1 1.0 IB, BASE CURRENT (mA)
10
20
0.2
10 1.0 IC, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
BC847/BC848
10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 400 300 200
3.0 Cob 2.0
100 80 60 40 30 20 0.5 0.7
VCE = 10 V TA = 25°C
1.0
0.4 0.6 0.8 1.0
2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
1.0
2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25°C 0.8 VBE(sat) @ IC/IB.