Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC849; BC850 NPN general purpose transistors
Product specification Supersedes data of 1998 Aug 06 1999 Apr 08
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. MARKING TYPE NUMBER BC849B BC849C Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850B BC850C MARKING CODE(1) 2F∗ 2G∗
Top view
handbook, halfpage
BC849; BC850
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 30 50 V V MIN. MAX. UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B BC849C; BC850C VCEsat VBEsat VBE Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA; note 1 IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V; note 2 IC = 10 mA; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. IC = 2 mA; VCE = 5 V; see Figs 2 and 3 CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 µA; VCE = 5 V; see Figs 2 and 3 MIN. − − − − − 200 420 − − − − 580 − − 100 − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
BC849; BC850
VALUE 500
UNIT K/W
TYP. − − − 240 450 290 520 90 200 700 900 660 − 2.5 11 − − −
MAX. 15 5 100 − − 450 800 250 600 − − 700 770 − − − 4 4
UNIT nA µA nA
mV mV mV mV mV mV pF pF MHz dB dB
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
1999 Apr 08
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849; BC850
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0 10−2
10−1
1
10
102
IC (mA)
103
BC849B; BC850B.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
600
MBH725
VCE = 5 V hFE
400
200
0 10−2
10−1
1
10
102
IC (mA)
103
BC849C; BC850C.
Fig.3 DC current gain; typical values.
1999 Apr 08
4
Philips Semiconductors
Product specification
NPN general purpose transistors
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BC849; BC850
SOT23
D
B
E
A
X
HE
v M A
3
Q A A1
1
e1 e bp
2
w M B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 08
5
Philips Semiconductors
Product specification
NPN general purpose transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BC849; BC850
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and d.