BC849BW

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. MARKING TYPE NUMBER BC849BW BC849CW Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850BW BC850CW MARKING CODE(1) 2F∗ 2G∗ handbook, halfpage BC849W; BC850W PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 Top view 2 MAM062 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC849W BC850W VCEO collector-emitter voltage BC849W BC850W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 30 50 V V MIN. MAX. UNIT 19...