DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC849; BC850 NPN general purpose transistors
Product specific...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC849; BC850
NPN general purpose
transistors
Product specification Supersedes data of 1998 Aug 06 1999 Apr 08
Philips Semiconductors
Product specification
NPN general purpose
transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860. MARKING TYPE NUMBER BC849B BC849C Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850B BC850C MARKING CODE(1) 2F∗ 2G∗
Top view
handbook, halfpage
BC849; BC850
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 30 50 V V MIN. MAX. UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
...