Document
2N65(F,B,H,G,D)S
2 Amps,650 Volts N-Channel Super Junction Power MOSFET
FEATURE
2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 2N65S
ITO-220AB 2N65FS
TO-262 2N65HS
TO-263 2N65BS
TO-252 2N65GS
TO-251 2N65DS
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
2N65(F,B,H,G,D)S
650 ±30 2 6 45 1 0.06 15 -55 to +150
260
10 1.1
UNIT
V
A
mJ A mJ V/ns ℃ ℃ lbf·in N·m
Thermal Characteristics
Parameter
Thermal resistanc.