BC850

BC846 ... BC850 BC846 ... BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO = 30...65 V Ptot = 250 mW Version 2015-10-30 ~ SOT-23 (TO-236) 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 1 1.9±0.1 2 1.1+0.1 -0.2 2.4 ±0.2 1.3±0.1 ELV Typical Applications Signal processing, Switching, Amplification Commercial grade 1 Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb Konform zu RoHS, REACH, Konfliktmineralien 1 WEEE Mechanische Daten 1) 3000 / 7“ Gegurtet auf Rolle 1=B 2=E 3=C Dimensions - Maße [mm] Weight approx. Case material Solder & assembly conditions 0.01 g UL 94V-0 260°C/10s Gewicht ca. Gehäusematerial Löt- und Einbaubedingungen MSL = 1 Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 2 mA B open E...