DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC849W; BC850W NPN general purpose transistors
Product speci...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC849W; BC850W
NPN general purpose
transistors
Product specification Supersedes data of 1997 Jun 20 1999 Apr 12
Philips Semiconductors
Product specification
NPN general purpose
transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W. MARKING TYPE NUMBER BC849BW BC849CW Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850BW BC850CW MARKING CODE(1) 2F∗ 2G∗
handbook, halfpage
BC849W; BC850W
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1 2
1 Top view 2
MAM062
Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC849W BC850W VCEO collector-emitter voltage BC849W BC850W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 30 50 V V MIN. MAX. UNIT
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