Document
2N6410 NPN (SILICON) 2N6411 PNP
COMPLEMENTARY SILICON ANNULAR POWER PLASTIC TRANSISTORS
.. designed for low voltage. low·power. high·gain audio amplifier applications.
• Collector· Emitter Sustaining Voltage -
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2.0 Adc
= 10 (Min) @ IC = 4.0 Adc
• Low Collector· Emitter Saturation Voltage VCE(sat) = 0.35 Vdc (Max) @ IC = 500 mAdc = 0.8 Vdc (Max) @ IC = 2.0 Adc
• High Current·Gain - Bandwidth Product -
tr = 50 MHz (Min) @ IC = 100 mAdc
• Pin Compatible with TO·220AB Package
'MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cu rrent - Continuous
Peak Base Current Total Power Dissipation @TC':: 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Case
• Indicates JEDEC Registered Data.
Symbol VCEO VCBO VEB
IC
IB Po.