DatasheetsPDF.com

2N6411 Dataheets PDF



Part Number 2N6411
Manufacturers ETC
Logo ETC
Description 4A POWER TRANSISTORS
Datasheet 2N6411 Datasheet2N6411 Datasheet (PDF)

2N6410 NPN (SILICON) 2N6411 PNP COMPLEMENTARY SILICON ANNULAR POWER PLASTIC TRANSISTORS .. designed for low voltage. low·power. high·gain audio amplifier applications. • Collector· Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 4.0 Adc • Low Collector· Emitter Saturation Voltage VCE(sat) = 0.35 Vdc (Max) @ IC = 500 mAdc = 0.8 Vdc (Max) @ IC = 2.0 Adc • High Current·Gain - Ba.

  2N6411   2N6411



Document
2N6410 NPN (SILICON) 2N6411 PNP COMPLEMENTARY SILICON ANNULAR POWER PLASTIC TRANSISTORS .. designed for low voltage. low·power. high·gain audio amplifier applications. • Collector· Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 4.0 Adc • Low Collector· Emitter Saturation Voltage VCE(sat) = 0.35 Vdc (Max) @ IC = 500 mAdc = 0.8 Vdc (Max) @ IC = 2.0 Adc • High Current·Gain - Bandwidth Product - tr = 50 MHz (Min) @ IC = 100 mAdc • Pin Compatible with TO·220AB Package 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cu rrent - Continuous Peak Base Current Total Power Dissipation @TC':: 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case • Indicates JEDEC Registered Data. Symbol VCEO VCBO VEB IC IB Po.


2N6410 2N6411 2N6412


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)