Document
2N6412,2N6413 NPN (SILICON) 2N6414,2N6415 PNP
COMPLEMENTARY PLASTIC SILICON ANNULAR POWER TRANSISTORS
· .. designed for low power audio amplifier and low current, high· speed switching applications.
• Low Co lIectdt·Emitter Sustaining Voltage ~
VCEO(sus) = 40 Vdc (Min) - 21116412, 21116414
. '= 60 Vdc (Min) - 21116413, 21116415
• High Current·Gain - Bandwidth Product fT = 50 MHz (Min) @ IC = 100 mAdc
• DC Current Gain Specified at 0.2, 1.0, 2.0 and 4.0 Adc
• Collector· Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc
• Pin Compatible With TO·220AB Package
"MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
~ Peak
VeEO VeBO VEBO
Ie
Base Current Total Power Dissipation@Tc
Derate Above 25°C
250e
IB Po
Operating and Storage Ju.nction Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg
Characteristic
Thermal ResIstance, Junction to Case
·lndicatesJEDEC Registered Dat.