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2N6415 Dataheets PDF



Part Number 2N6415
Manufacturers ETC
Logo ETC
Description 4A POWER TRANSISTORS
Datasheet 2N6415 Datasheet2N6415 Datasheet (PDF)

2N6412,2N6413 NPN (SILICON) 2N6414,2N6415 PNP COMPLEMENTARY PLASTIC SILICON ANNULAR POWER TRANSISTORS · .. designed for low power audio amplifier and low current, high· speed switching applications. • Low Co lIectdt·Emitter Sustaining Voltage ~ VCEO(sus) = 40 Vdc (Min) - 21116412, 21116414 . '= 60 Vdc (Min) - 21116413, 21116415 • High Current·Gain - Bandwidth Product fT = 50 MHz (Min) @ IC = 100 mAdc • DC Current Gain Specified at 0.2, 1.0, 2.0 and 4.0 Adc • Collector· Emitter Saturation Voltag.

  2N6415   2N6415


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2N6412,2N6413 NPN (SILICON) 2N6414,2N6415 PNP COMPLEMENTARY PLASTIC SILICON ANNULAR POWER TRANSISTORS · .. designed for low power audio amplifier and low current, high· speed switching applications. • Low Co lIectdt·Emitter Sustaining Voltage ~ VCEO(sus) = 40 Vdc (Min) - 21116412, 21116414 . '= 60 Vdc (Min) - 21116413, 21116415 • High Current·Gain - Bandwidth Product fT = 50 MHz (Min) @ IC = 100 mAdc • DC Current Gain Specified at 0.2, 1.0, 2.0 and 4.0 Adc • Collector· Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc • Pin Compatible With TO·220AB Package "MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous ~ Peak VeEO VeBO VEBO Ie Base Current Total Power Dissipation@Tc Derate Above 25°C 250e IB Po Operating and Storage Ju.nction Temperature Range THERMAL CHARACTERISTICS TJ, Tstg Characteristic Thermal ResIstance, Junction to Case ·lndicatesJEDEC Registered Dat.


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