2N6441 (SILICON)
thru
2N6448
MULTIPLE SILICON ANNULAR MONOLITHIC TRANSISTORS
... designed for use as differential amplif...
2N6441 (SILICON)
thru
2N6448
MULTIPLE SILICON ANNULAR MONOLITHIC
TRANSISTORS
... designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation" applications.
Excellent Temperature Tracking - 2N6445 thru 2N6448
"'IVBEl - VBE21 = 0.8 mVdc (Maxi @-55 to +250 C
= 1.0 mVdc (Maxi @+25 to +1250 C Low Collector-Emitter Saturation Voltage -
VCE(satl = 0.1 Vdc (Typl @ IC = 1.0 mAdc
DC Current Gain Specified - 10 !lAdc to 1.0 mAdc High Current-Gain-Bandwidth Product-
fT = 500 MHz (Typl @ IC = 0.5 mAdc
NPN SILICON MONOLITHIC MULTIPLE
TRANSISTORS
'MAXIMUM RATING Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Contmuous
Total Power DiSSipation @ T A = 25°C
Derate above 25°C
Total Power DIssipation @TC = 25°C
Derate above 25°C Operatmg and Storage Junction
Temperature Range
(1) One die or both die with equal power
THERMAL CHARACTERISTICS
Characteristic Thermal Resist...
