3N124

3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier applications in the audio through VHF frequency range, features high breakdown voltage, low transfer capacitance, and tetrode configuration for a broad range of applications. CASE 20 TO-72 O2 o STYLE4 PIN 1. SOURCE 2. GATE 10 0 3 3. DRAIN o 4. GATE2- 4 ~~~~TRATE AND MAXIMUM RATINGS Rating Symbol Value Unit Reverse Gate-Source Voltage Gate 1 Gate 2 Drain-Source Voltage Drain-Gate Voltage Gate I Gate 2 Gate 1-Gate 2 Current Gate 2-Gate 1 Current Gate Current Gate I Gate 2 Drain Current Junction Operating Temperature Storage Temperature Range Total Device Dissipation @ TA = 25°C Derate Above 25°C Total Device Dissipation @ TC = 25°C Derate Above 250C VGlS VG2S VDS VDGl VDG2 IGlG2 IG2G1 IGl IG2 ID TJ Tstg PD PD 50 50 50 50 50 1.0 1.0 20 20 20 175 -65 to +175 300 1.71 800 4.57 Vdc Vdc Vdc mAdc mAdc mAdc mAdc °c °c mW...