1403N (SILICON)
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR
Depletion mode (Type B) dual...
1403N (SILICON)
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT
TRANSISTOR
Depletion mode (Type B) dual-gate
transistor designed for VHF amplifier and mixer applications_
N-CHANNEL
DUAL-GATE MOS FIELD-EFFECT
TRANSISTOR
TypeB
Silicon-Nitride Passivation for Excellent Long Term Stability
High Common-Source Power Gain -
Gps = 16 dB (Min) @f =200 MHz
Low Reverse Transfer Capacitance -
Crss =0.02 pF (Typ) @ VOS = 13 Vdc
U
MAXIMUM RATINGS Rating
Drain-Source Voltage Drain-Gate I Voltage
Drain-Gate 2 Voltage
Reverse Gate I-Source Voltage
Reverse Gate 2-Source Voltage
Forward Gate I-Source Voltage Forward Gate 2-Source Voltage Drain Current Totai Device .Dissipation @TA = 25° C
Derate above 25· C Operating and Storage Junction
Temperature Range
Symbol
vos
VDGI VDG2
VGS1(r) VGS2 (r) VGS1(f) VGS2(f)
~
PD
TJ,Tstg
Value o to +20
Unit
Vdc
20 Vdc
20 Vdc
-8.0 Vdc
B.Oto 0.4 VDB Vdc
+1.0
Vdc
0.4 VDS 50
Vdc mAdc
400 2.67
mW mWrC
-65 to +175 ·C
HANDLING ...