3N 155,A (SILICON) 3N156,A
P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed ...
3N 155,A (SILICON) 3N156,A
P-channel silicon nitride passivated MOS field-effect enhancement mode
transistors designed for chopper and switching application.
CASE 20 (T0-72)
O2 o
STYLE Z PIN 1. SOURCE Z. GATE
1 000 3
3. DRAIN
4. SUBSTRATE AND
CASE LEAD
MAXIMUM RATINGS
Rating
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Operating Junction Temperature Range Storage Temperature Range
Symbol
VDS VDG VGS 1D PD
TJ Tstg
Value
35 35 50 30 300 1.7 -65 to +175 -65 to +200
Unit
Vdc Vdc Vdc mAdc mW mW;oC °c °c
HANDLING PRECAUTIONS:
MOS field-effect
transistors have extremely high input resistance. They can be damaged by the accumulation of excess static charge. Avoid possible damage to the devices while handling. testing. or in actual operation. by following the procedures outlined below:
1. To avoid the build-up of static charge. the leads of the devices should remain shorted together with a metal...
