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3N210

N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS

Description

3N209 (SILICON) 3N210 N·CHANNEL DUAL·GATE SILlCON·NITRIDE PASSIVATED MOS FIELD·EFFECT TRANSISTORS · .. depletion mode dual gate transistors designed and characterized for UHF communications applications Two Packages OfferedHermetic Metal TO· 72 - 3N209 Micro-H Plastic - 3N21 0 Silicon Nitride Passivation for Excellent Long Term Stability Zener Diode P...

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