2N6366 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
. designed for operation in driver and predriver stages fo...
2N6366 (SILICON)
The RF Line
NPN SILICON RF POWER
TRANSISTOR
. designed for operation in driver and predriver stages for high power linear amplifiers, 2.0 to 30 MHz. Optimized for Operation from a 12.5 Volt Supply Power Gain @ 2.5 W (PEP) = 17 dB (Min) I ntermodulation Distortion at Rated Power Output
IMD = -35 dB (Max)
2.5 W (PEP)-30 MHz
RFPOWER
TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating * COllector-Emitter Voltage * Collector-Base Voltage * Emitter-Base Voltage * Collector Current - Continuous *Total Device Dissipation@Tc = 25°C
Derate above 25°C Storage Temperature Range
Maximum Stud Torque (11
Symbol VCEO VCBO VEBO
IC
Po
T stg -
Value 18 36 4.0 1.0 10
57.2 -65 to +200
2.1
Unit Vdc Vdc Vdc Adc Watts mW/oC
°c
inAb.
-Indicates JEDEC Registered Data. (1) For repeated assembly use 1.8 in-Ib maximum.
2-663
PIN 1 EMITTER 2. BASE 3. COLLECTOR
MILLIMETERS DIM MIN MAX A 10.49 11.00 8 9.19 9.53 C 5.33 5.72
o 0.406 0.533
E 1.65 1.78 F 0.406 0.483
G 2.5 esc
H 0.5l...
