2N6370 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
designed primarily as a driver for high'power linear ampli...
2N6370 (SILICON)
The RF Line
NPN SILICON RF POWER
TRANSISTOR
designed primarily as a driver for high'power linear amplifier stages operating from 2.0 to 30 MHz with a 28·Volt supply.
Power Output @ 28 Vdc, 30 MHz 10 W (PEP)
Intermodulation Distortion at Rated Power OutputIMD ~ -30 dB (Max)
10 W (PEP) - 30 MHz
RF POWER
TRANSISTOR NPN SILICON
"MAXIMUM RATINGS
Ratina Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device DissipatIOn @TC""250C
Derate above 25°C Storage Temperature Range
* Indicates JEDEC Registered Data
Symbol VeEO VCRn VEBO
Ie
Po
Tstg
Value 35 65 4.0 1.5 20
0.114 -65 to +200
Unit Vdc Vdc Vdc Adc
Watts
wf'e
°e
TYPICAL DRIVER APPLICATION
05 W(PEP)
+---__ '50W(PEP)
Q
fb~ETB~ __\~A rTl
SEATING PLANE
MILLIMETERS INCHES DIM MI. MAX MI. MAX
A 24.54
8 9.47 C 6.07 D 5.59 E 2.16 F 010 G 18.29 H 21.59
J 3.12 K 10.80 L 6.22
M 40' 3.81 n 2.97
24.89
9.73
7.14 584 2.67 0.15 18.54 22.10 3.23 11.05 6.4...
