2N6067 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
· .. designed for medium-current saturated switching and core driver ap...
2N6067 (SILICON)
PNP SILICON ANNULAR
TRANSISTOR
· .. designed for medium-current saturated switching and core driver applications.
Fast Switching Times @ VCC = 40 Vdc ton = 40 ns (Max) toft = 80 ns (Max)
Current-Gain-Bandwidth Product IT = 150 MHz (Min) @ IC = 50 mAde
Low Collector-Emitter Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 500 mAde
PNP SILICON SWITCHING
TRANSISTOR
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Power Dissipation @ TA "" 25°C
Derate above 25°C Total Power Dissipation@ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
*THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Symbol VCEO VCB VEB
IC PD
PD
T J.Tstg
Symbol RBJC RBJA
"Indicates JEDEC Registered Data
Value
40 50 5.0 1.0 625 5.0 1.5 12 -55 to +150
Unit
Vdc Vdc Vdc Adc mW mW/oC Watt mW/oC
°c
Max 83.3 200
...
