2N6094 thru 2N6097 (SILICON)
The RF Lin.e
PNP SILICON RF POWER TRANSISTORS
... designed for 12.5 Volt VHF large-signal ...
2N6094 thru 2N6097 (SILICON)
The RF Lin.e
PNP SILICON RF POWER
TRANSISTORS
... designed for 12.5 Volt VHF large-signal amplifier applications required in military and industrial equipment operating to 250 MHz.
Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in
Transistor Ruggedness
Low Lead Inductance Stripline Packaging for Easier Design and IncreaSed Broadband Capabilities
Flange Package for Easy Mounting and BetterThermal Conductivity to Heat Sink
Exceptional Power Output Stability versus Temperature
4_0. 15. 30.40WATTS-175 MHz
PNPSILICON RF POWER
TRANSISTORS
"MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation @Te=250 e
Derate above 25°C Storage Temperature
Range
.Svmbol 2N6094
VeEO
VeBO
VEBO Ie
1.0
2N6095 2N6096 18 36 4.0
2.5 4.0
...2N6097
6.0
Unit Vdc Vdc Vdc Adc
PO!l) T stg
8.0 45.7
20 40
114 228 -65'0...
