2N6189

2N6186 thru 2N6189 (SILICON) MEDIUM-POWER PNP SILICON TRANSISTORS . designed for switching and wide-band amplifier applications. Low Collector-Emitter Saturation Voltage VCE(satl = 1.2 Vdc (Maxi @ IC = 10 Adc DC Current Gain Specified to 5 Amperes Excellent Safe Operating Area Packaged in the Compact, High Dissipation TO-59 Case Isolated Collector Configuration 2N6186 thru 2N6189 Complement to NPN 2N5346 thru 2N5349 10 AMPERE POWER TRANSISTORS PNP SILICON 80-100 VOLTS 60 WATTS "MAXIMUM RATINGS Rating Collector-Emttter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation@Tc-2S>C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VeEO Ve8 VES Ie IS Po TJ. Tstg 2N6186 2N6187 2N6188 2N6189 80 100 80 100 6.0 10 2.0 60 343 -65 to +200 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case -Indicates JEDEC Registered Data Max 2.91 FIGURE 1 - POWER...