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2N6256

ETC

NPN SILICON RF POWER TRANSISTOR

2N62S6 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR ... designed for 12.5 Volt. VHF/UHF large signal Amplifier...


ETC

2N6256

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Description
2N62S6 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR ... designed for 12.5 Volt. VHF/UHF large signal Amplifier/Multiplier applications required in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt. 470 MHz Characteristics Power Output = 0.5 Watts Minimum Gain = 7.0 dB Efficiency = 60% Characterized with series eqUivalent large signal impedance parameters Driver for 2N5944 and 2N5945 UHF amplifiers Capable of withstanding severe load mismatch 0.5 WATT - 470 MHz RF POWER TRANSISTOR NPN SILICON "MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Continuous Device DISsipation @TC = 25°C - Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 4.0 0.4 2.0 11.4 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/oC °c This device IS designed for AF operation. The total device diSSipation ratmg applies only when the device IS ...




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