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2N6278 Dataheets PDF



Part Number 2N6278
Manufacturers ETC
Logo ETC
Description HIGH-POWER NPN SILICON TRANSISTORS
Datasheet 2N6278 Datasheet2N6278 Datasheet (PDF)

2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 • High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc • Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC = 2.

  2N6278   2N6278


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2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (Min) - 2N6281 • High DC Current Gain hFE = 30-120@ IC = 20 Adc = 10 (Min) @ IC = 50 Adc • Low Coliector·Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC = 20 Adc tr = 0.351ls (Max) ts = 0.8 Ils (Max) tf = 0.25 Ils (Max) 'MAXIMUM RATINGS Rating Svmbol Collector-Base Voltage VeB Collector-Emitter Voltage VeEO Emitter-Base Voltage VEB Collector Current - Continuous Peak Ie Base Current IR Total Device Dissipation @ Te=250e Derate above 25°C Po Operating and Storage Junction TJ,T,tg Temperature Range THERMAL CHARACTERISTICS I I2N6278 2N6279 2N6280[ 2N6281 I I I120 140 160 180 I I I100 120 140 150 . .6.0 .. ..50 100 .. •20 .


2N6256 2N6278 2N6279


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