2N5942 TRANSISTORS Datasheet

2N5942 Datasheet, PDF, Equivalent


Part Number

2N5942

Description

NPN SILICON RF POWER TRANSISTORS

Manufacture

ETC

Total Page 8 Pages
Datasheet
Download 2N5942 Datasheet


2N5942
2N5941 (SILICON)
2N5942
The RF Lin.e
NPN SILICON RF POWER TRANSISTORS
· .. designed primarily for applications as a high-power linear amplifier
from 2.0 to 30 MHz, in single sideband mobile, marine and base station
equipment.
• Specified 28 Volt, 30 MHz Characteristics -
Output Power = 40 W (PEP) - 2N5941
= 80 W (PEP) - 2N5942
Minimum Gain = 13 dB
Efficiency = 40%
Intermodulation Distortion = -30 dB (Max)
• Isothermal-Resistor Design Results in Rugged Device
• 2N5942 Available as Matched Pairs for Push-Pull
Amplifier Applications
MATCHING PROCEOURE
In the push-pull circuit configuration two device parameters are critical for
optimum circuit performance. These parameters are VSE(on) and hFE. Both
parameters can be guaranteed by measuring ICO of the devices and selecting
pairs with a "Ica ..;; 10 mAde.
Actual Ica matching is performed in the 2N5942 test circuit with a VeE
equal to 2B Volts. The base bias supply is adjusted to set Ica equal to 40
mAde using a reference standard 2N5942. The lea of all production 2N5942
transistors is measured using this base bias supply setting. The production
2N5942's are tested and categorized in ranges of 10 mAde. Finally, the de-
vices are stocked as pairs with a guaranteed l:l.ICQ ~ 10 mAde.
40 W (PEPI-30 MHz - 2N5941
80 W (PEPI-30 MHz - 2N5942
RF POWER
TRANSISTORS
NPN SILICON
2N5941
2N5942
2N5941
HV/":>-Z
o yK l STYPILNE~I:':~~TER
3 EMITTER
r------t-B
~rn:,OI=.:.:.±--t..E::.I
4. COLLECTOR
N
~A--I---n-
SEATING PLANE
MILLIMETERS INCH
DIM MI. MAX MI' MAX
,..A 24.84
0.910 0'"
9.47 9.73 0.313 0.383
C 6.07 7.14 0.239 OBI
...D '.59
O. .30
216 2.91 0086 0.105
F 0.10 0.15 0.... 0.00'
1.
H 21.59 22.10 0... 0.810
J .I
.2 0.1
... ..X
L
ID.Bo
6.22
11.06
s...
3.1 <5,
0.425 0.435
0'48 0.255
0.150 0.188
Q 2.91 3.12 0.117 0.123
CASE 211-01
·MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TC = 250 C
Derate above 25°C
Storage Temperature Range
.
Indicates JEDEC Registered Data
Symbol
VCEO
VCBO
VEBO
IC
Po
Tstg
I2N5941 2N5942
35
65
4.0
6.0
80
0.457
12
I 140
O.B
-65 to +200
The.. devic.. are designed for RF operation. The tot.1 davlce
dissipation rating applies only when the device. are operated a.
RF amplifiers.
Unit
Vdc
Vdc
Vdc
Adc
Watts
wf'lc
°c
2N5942
EMITTER
BASf
3 EMITTER
bS2~ C'" ~ ~~".
r --l-n-
MIUIMET
DI. X
.."A 24.84 24.89
11.81 12.07
C 6.73
D 2.1S 3.94
E 2.13 2.54
"..F 0.10 0.15
Q 18.29 18.54
H 38.10
J .1 3.23
.nK 17.78 19.05
L 6.48
M
1.. 4.32
Q 2.97 3.12
INCHES
MI. AX
0.970 0.9111
0.465 0.475
0.229 0
0.086 0.1
0.1184 0.100
0..... 0.00.
0.720 0.730
1.400 1.100
0.123 0.121
....0.700
... ...0.245
"44 0.170
0.117 0.123
CASE 211-02
2-347

2N5942
2N5941, 2N5942 (continued)
*E lECTR ICAl CHARACTERISTICS (Tc = 250 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 mAdc,lB = 0)
Collector-Emitter Breakdown Voltage
(lC = 100 mAdc, VBE = 0)
Emitter·Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0, TC = +550 C)
2N5941
2N5942
ON CHARACTERISTICS
DC Current Gain
(lC = 0.5 Adc, VCE = 5.0 Vdc)
(lc = 1.0 Adc, VCE = 5.0 Vdc)
2N5941
2N5942
DYNAMIC CHARACTERISTICS
Current·Gain-Bandwidth Product
(lc = 0.25 Adc, VCE = 15 Vdc, f = 50 MHz)
(lc = 0.5 Adc, VCE = 15 Vdc, f = 50 MHz)
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
2N5941
2N5942
2N5941
2N5942
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
(Pout = 40 W (PEP), IC = 1.78 Adc (Max), VCC = 28 Vdc,
fl = 30 MHz, f2 = 30.001 MHz)
(Pout = BO W (PEP), IC= 3.575 Adc (Max), VCC = 2B Vdc,
fl = 30 MHz, f2 = 30.001 MHz)
2N5941
2N5942
Intarmodulation Distortion Ratio (Figure 1)
(Pout =40W (PEP),IC= 1.7BAdc (Max), VCC = 28 Vdc,
fl = 30 MHz, f2 = 30.001 MHz)
(Pout = BOW (PEPI.IC= 3.575 Adc (Max), VCC = 28 Vdc
fl =30 MHz, 12 =30.001 MHz)
2N5941
2N5942
Symbol
BVCEO
BVCES
BVEBO
ICES
fT
Cob
GpE
IMD
Collector Efficiency
(Pout = 40 W (PEP), IC = 1.78 Adc (Max), VCC = 28 Vdc,
1, = 30 MHz, 12 = 30.001 MHz)
2N5941
1)
(Pout = 80 W (PEP), IC = 3.575 Adc (Max), VCC = 28 Vdc,
. 1, = 30 MHz, 12 = 30.001 MHz)
IndICates JEDEC Registered Data.
2N5942
FIGURE 1 - 30 MHz TEST CIRCUIT
RF BEADS
Min
35
65
4.0
-
-
50
50
-
-
13
13
-
-
40
40
Max Unit
- Vdc
- Vdc
-- Vdc
mAdc
5.0
10
MHz
-
-
pF
125
250
dB
-
-
dB
-30
-30
%
-
-
ARCO 469
(170·780 pFI
II
VBB adjusted for ICO. 2N5941 - 20 mAde (leo = QUiescent
RFC. 20 TURNS #12 AWG ENAMELED WIRE CLOSE WOUND IN 2 LAYERS, 1/4"I.D.
2N5942 - 40 mAde Collector Current)
Tl: 20 TURNS #24AWG WIRE WOUND ON MICRD·METALS T37·7 TOROID
CORE CENTER TAPPED.
T2: 1:9 XFMR; 6TURNS OF 2 TWISTED PAl RS OF #28 AWG ENAMELED WIRE.
(8 CRESTS PER INCH) BIFILARWOUND ON EACH OF 2SEPARATE 8ALUN CORES.
Cl - 2N5941 - 80·480 pF, ARCO 466 or Equiv
2N5942 - 170·780 pF, ARCO 469 or Equiv
C2 - 2N5941 - 220 pF
2N5942 - 330 pF
(Stackpole #57·1503, No. 14 Material) Interconnected as shown
RF BEADS. FERROXCUBE #56·590·65/3B
2-348


Features 2N5941 (SILICON) 2N5942 The RF Lin.e NP N SILICON RF POWER TRANSISTORS · .. de signed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, mar ine and base station equipment. • Spe cified 28 Volt, 30 MHz Characteristics - Output Power = 40 W (PEP) - 2N5941 = 80 W (PEP) - 2N5942 Minimum Gain = 13 d B Efficiency = 40% Intermodulation Dist ortion = -30 dB (Max) • Isothermal-Re sistor Design Results in Rugged Device • 2N5942 Available as Matched Pairs f or Push-Pull Amplifier Applications MAT CHING PROCEOURE In the push-pull circui t configuration two device parameters a re critical for optimum circuit perform ance. These parameters are VSE(on) and hFE. Both parameters can be guaranteed by measuring ICO of the devices and sel ecting pairs with a "Ica ..;; 10 mAde. Actual Ica matching is performed in the 2N5942 test circuit with a VeE equal t o 2B Volts. The base bias supply is adj usted to set Ica equal to 40 mAde using a reference standard 2N.
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