2N5945 TRANSISTORS Datasheet

2N5945 Datasheet, PDF, Equivalent


Part Number

2N5945

Description

NPN SILICON RF POWER TRANSISTORS

Manufacture

ETC

Total Page 7 Pages
Datasheet
Download 2N5945 Datasheet


2N5945
2N5944 (SILICON)
2N5945
2N5946
The RF Line
NPN SILICON RF POWER TRANSISTORS
. designed for 7.0 to 15 Volts, UHF large signal amplifier applica-
tions required in industrial and commercial FM equipment operating
in the 400 to 960 MHz range.
• Specified 12.5 Volt, 470 MHz Characteristics-
Power Output = 2 0 W 2N5944
4.0 W -- 2N5945
10 W - 2N5946
Minimum Gain = 9.0 dB - 2N5944
8.0 dB - 2N5945
6.0 dB - 2N5946
Efficiency = 60% Minimum
• RF ballasting provides protection against device damage due to
load mismatch
• Characterized with series equivalent large-signal Impedance
parameters
2.0,4,0, 10 W - 470 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
LSymbol 2N5944i 2N 5945 2N5946
UOit
*Collector-Emltter Voltage
*Collector-Base Voltage
*Emttter-Base Voltage
·Collector Current - Contmuous
*Total Device DISSipation @TC= 250 C(1
Derate above 25°C
*5torage Temperature Range
Stud Torque l2J
VCEO
VCBO
VEBO
'C
PD
T stg
16
36
40
04 I 08 I 20
I I50 15 375
285 85.5 214
-65 to +200
65
Vdc
Vdc
Vdc
Adc
Watts
mW/oC
°c
m-Ibs.
·'ndtcates JEDEC Registered Data
(1 )These devices are designed for R F operation The total device dissipation ratmg
applies only when the devices are operated as AF amplifiers
(2)For repeated assembly use 5 tn-Ibs
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 7.06 7.26 0.278 0.286
B 6.25 6.45 0.246 0.254
C 15.49 16.51 0.610 0.650
0 5.59 5.84 0.220 0.230
E 1.52 NOM 0.060 NOM
H 26.80 27.05 1.055 1.065
J 0.127 NOM 0.005 NOM
K 13.41 13.51 0.528 0.532
M 450 NOM
450 NOM
P - 1.27 - 0.050
R 4.52 5.03 0.178 0.198
S 3.00 3.25 0.118 0.128
T 1.40 1.65 0.055 0.065
U 2.92 3.68 0.115 0.145
CASE 244
2·363

2N5945
2N5944, 2N5945, 2N5946 (continued)
'ELECTRICAL CHARACTERISTICS ITC" 250 C unless otherwISe noted I
Characteristic
Symbol
Min
Typ Mox
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IIC" 50 mAde, 'B =01
IIc = 100 mAde, 18 =01
IIc =200 mAde, 'B =01
Collector-Emitter Breakdown Voltage
IIc =50 mAde, VBE =01
IIC" 100 mAde, VBE = 01
II C =200 mAde, VBE =01
Emitter-Base Breakdown Voltage
liE = 1.0 mAde, IC = 01
liE" 2.0 mAde, IC = 01
(IE" 4.0 mAde, IC = 01
Collector Cutoff Current
(VCE = 15 Vde, VBE =0, TC = 550 CI
Collector Cutoff Current
(VCB" 15 Vde, 'E "Ol
2N5944
2N5945
2N5946
BVCEO
16
16
16
-
-
-
Vde
-
-
-
2N5944
2N5945
2N5946
BVCES
36
36
36
-
-
-
- Vde
-
-
2N5944
2N5945
2N5946
BVEBO
4.0
4.0
4.0
-
-
-
Vde
-
-
-
2N5944
2N5945,2N5946
ICES
-
-
mAde
0.2 10
0,5 20
- -2N5944,2N5945
'CBO
mAde
1.0
2N5946
- - 2.0
ON CHARACTERISTICS
DC Current Gain
IIC" 100 mAde, VCE "5.0 Vdel
IIc = 200 mAde, VCE = 5.0 Vdcl
IIc = 500 mAde, VCE = 5.0 Vdel
2N5944
2N5945
2N5946
hFE
20 80
20 80
20 80
-
-
-
-
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vde, 'E = 0, f = 1.0 MHzl
2N5944
2N5945
2N5946
Cob
-
-
-
pF
11 15
18 25
38 45
FUNCTIONAL TEST IF igure 201
Common-Emitter Amplifier Power Gain
IVcC = 12.5 Vde, Pout = 2.0 W, Ic(moxl = 267 mAde,
f = 470 MHzl
(VCC = 12.5 Vde, Pout = 4.0 W, Ic(moxl =533 mAde,
f = 470 MHz)
IVCC = 12.5 Vde, Pout = 10 W, 'c(mox) = 1.33Ade,
f = 470 MHz)
2N5944
2N5945
2N5946
GpE
9.0
10
B.O 9.0
6.0 7.0
-
-
-
dB
Collector Efficiency
IVCC = 12.5 Vde, Pout = 2.0 W, Ic(moxl = 240 mAde,
f = 470 MHzl
(VCC = 12.5 Vde, Pout' = 4.0 W, Ic(mox) = 500 mAde,
f = 470 MHz)
IVCC" 12.5 Vde, Pout = 10 W, Iclmox) = 1.3 Ade,
f = 470 MHz)
·1 ndlcates JE DEC Registered Data
2N5944
2N5945
2N5946
1/
60 -
60 -
60 -
-%
-
-
These devices are available in various packages, such as a stud-
less stripline package, TO-39, and also in chip form on beryllium
oxide carriers for hybrid assemblies.
'
For further information, contact your nearest Motorola repre-
sentative or the factory representative.
2-364


Features 2N5944 (SILICON) 2N5945 2N5946 The RF Li ne NPN SILICON RF POWER TRANSISTORS . d esigned for 7.0 to 15 Volts, UHF large signal amplifier applications required in industrial and commercial FM equipme nt operating in the 400 to 960 MHz rang e. • Specified 12.5 Volt, 470 MHz Cha racteristics- Power Output = 2 0 W 2N59 44 4.0 W -- 2N5945 10 W - 2N5946 Minimu m Gain = 9.0 dB - 2N5944 8.0 dB - 2N594 5 6.0 dB - 2N5946 Efficiency = 60% Mini mum • RF ballasting provides protecti on against device damage due to load mi smatch • Characterized with series eq uivalent large-signal Impedance paramet ers 2.0,4,0, 10 W - 470 MHz RF POWER T RANSISTORS NPN SILICON MAXIMUM RATINGS Rating LSymbol 2N5944i 2N 5945 2N5946 UOit *Collector-Emltter Voltage *Col lector-Base Voltage *Emttter-Base Volta ge ·Collector Current - Contmuous *Tot al Device DISSipation @TC= 250 C(1 Dera te above 25°C *5torage Temperature Ran ge Stud Torque l2J VCEO VCBO VEBO 'C P D T stg 16 36 40 04 I 08 I 20 I I50 15 375 285 85.5 214 -65 to.
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