2N5981

2N5980 2N59812N5982(SILICON) MJE5980 MJE5981 MJE5982 HIGH POWER PNP SILICON TRANSISTORS designed for use in general-purpose amplifier and switching applications. DC Current Gain Specified to 8 Amperes hFE = 20-120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5980, MJE5980 = 60 Vdc (Min) - 2N5981, MJE5981 = 80 Vdc (Min) - 2N5982, MJE5982 High Current Gain - 8andwidth Product - fT = 2.0 MHz (Min) @ IC = 500 mAde Complements to NPN Transistors - 2N5983, 2N5984, 2N5985 and MJE5983,MJE5984,MJE5985 Choice of Packages - 2N5980 Series - Case 90 MJE5980 Series - Case 199 "MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage VeEO Vee Emitter-Base Voltage Collector Current - Continuous Peak It5ase \.IUffent Total Device Dissipation @Te c 250e Derate above 250e VEe Ie e Po Operating and Storage TJ, Tstg Junction Temperature Range 2N5980 MJE5980 40 60 . - 2N5981 MJE5981 60 80 5...