2N5980 2N59812N5982(SILICON) MJE5980 MJE5981 MJE5982
HIGH POWER PNP SILICON TRANSISTORS
designed for use in general-pu...
2N5980 2N59812N5982(SILICON) MJE5980 MJE5981 MJE5982
HIGH POWER
PNP SILICON
TRANSISTORS
designed for use in general-purpose amplifier and switching applications.
DC Current Gain Specified to 8 Amperes hFE = 20-120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc
Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5980, MJE5980 = 60 Vdc (Min) - 2N5981, MJE5981 = 80 Vdc (Min) - 2N5982, MJE5982
High Current Gain - 8andwidth Product -
fT = 2.0 MHz (Min) @ IC = 500 mAde
Complements to
NPN Transistors - 2N5983, 2N5984, 2N5985 and MJE5983,MJE5984,MJE5985
Choice of Packages - 2N5980 Series - Case 90 MJE5980 Series - Case 199
"MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage Collector-Base Voltage
VeEO Vee
Emitter-Base Voltage
Collector Current - Continuous Peak
It5ase \.IUffent
Total Device Dissipation @Te c 250e Derate above 250e
VEe Ie
e
Po
Operating and Storage
TJ, Tstg
Junction Temperature Range
2N5980 MJE5980
40 60
.
-
2N5981 MJE5981
60
80
5...